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    陈琳
    教授 、博士生导师
    电         话：
    研  究  所：
    邮         箱：linchen@fudan.edu.cn
    个人网址：
    办公地址：复旦大学邯郸校区微电子学楼
    • 研究方向
    • 教育背景
    • 学术经历
    • 荣誉称号

  • 研究方向：

    集成电路新原理器件与先进CMOS工艺

    新型存储器件与存算一体技术

    柔性电子器件与可穿戴技术

    集成电路先进互连与三维集成技术

     

    教育背景：

    复旦大学，微电子学与固体电子学，博士研究生

     

    学术经历：

    2019年11月-至今 复旦大学微电子学院/集成电路与微纳电子创新学院，教授

    2014年10月-2019年11月 复旦大学微电子学院，副研究员

    2012年07月-2014年08月 荷兰皇家飞利浦公司，研发经理

    2010年07月-2010年11月 德国弗劳恩霍夫研究所，访问学者

     

    荣誉称号：

    2025，国家级领军人才

    2024，上海市“曙光计划”

    2023，教育部科学技术奖（自然科学）二等奖

    2023，复旦大学卓识杰出人才

    2021，国家重大人才工程“青年学者”

    2021，复旦大学“五四奖章”

    2020，复旦大学卓学优秀人才

    2020，上海市科学技术奖（自然科学）二等奖

    2019，上海市科技启明星

    2016，上海市高校青年科研骨干“晨光计划”

     

    主持承担项目：

    国家重点研发计划青年科学家项目

    国家自然科学基金重大研究重点支持项目

    国家科技重大专项（02专项）课题

    国家自然科学基金重大研发项目

    国家自然科学基金委青年项目

    上海市科技行动计划项目

     

    代表性论文：

    [1] J. Yu, S. Guo, J. Zhang, X. Jin, C. Wu, M. Zhao, H. Li, C. Guo, K. Xu, Y. Tian, D. Tian, Z. Li, T. Wang, H. Zhu, Q. Sun, Y. Xie, H. Wang, D. Zhang, and L. Chen（陈琳）, 3D Trench Hf0.5Zr0.5O2-Based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read Speed, Low Power Consumption (0.605 pJ/bit) and Prominent High-Temperature Reliability (Baking@ 175° C). IEEE International Electron Devices Meeting (IEDM), 2024.

    [2] Q. Li, S. Wang, Z. Li, X. Hu, Y. Liu, J. Yu, Y. Yang, T. Wang, J. Meng, Q. Sun, D.W. Zhang, L. Chen (陈琳), High-performance ferroelectric field-effect transistors with ultra-thin indium tin oxide channels for flexible and transparent electronics. Nature Communications, 2024.

    [3] T. Wang, J. Meng, X. Zhou, Y. Liu, Z. He, Q. Han, Q. Li, J. Yu, Z. Li, Y. Liu, H. Zhu, Q. Sun, D.W. Zhang, Peining Chen, H. Peng, L. Chen (陈琳) Reconfigurable neuromorphic memristor network for ultralow-power smart textile electronics. Nature Communications, 2022.

    [4] Y. Liu, X. Zhou, H. Yan, X. Shi, K. Chen, J. Zhou, J. Meng, T. Wang, Y. Ai, J. Wu, J. Chen, K. Zeng, L. Chen (陈琳), Y. Peng, X. Sun, P. Chen, and H. P. Liu, Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels. Advanced Materials, 2023.

    [5] B. Cai, Y. Huang, L. Tang, T. Wang, C. Wang, Q. Sun, D.W. Zhang, L. Chen (陈琳), All‐Optically Controlled Retinomorphic Memristor for Image Processing and Stabilization. Advanced Functional Materials. 2023.

    [6] X. Hu, Z. Li, T. Feng, J. Meng, Q. Li, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Flexible Organic Field‐Effect Transistor (OFET) Based 2T0C DRAM Cells with 2‐Bit Operation and Extended Retention. Advanced Science, 2025.

    [7] Z. Li, S. Tang, T. Wang, Y. Liu, J. Meng, J. Yu, K. Xu, R. Yuan, H. Zhu, Q. Sun, S. Chen, D.W. Zhang, L. Chen (陈琳), Effect of Lanthanum‐Aluminum Co‐Doping on Structure of Hafnium Oxide Ferroelectric Crystals. Advanced Science, 2025.

    [8] T.-Y. Wang, J.-L. Meng, Z.-Y. He, L. Chen（陈琳）, H. Zhu, Q.-Q. Sun, S.-J. Ding, P. Zhou, and D. W. Zhang, “Ultralow Power Wearable Heterosynapse with Photoelectric Synergistic Modulation,” Advanced Science, vol. 7, no. 8, Apr, 2020.

    [9] C. Lu, J. Meng, J. Song, K. Xu, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Reconfigurable selector-free all-optical controlled neuromorphic memristor for in-memory sensing and reservoir computing. ACS nano, 2024.

    [10] J. Meng, J. Song, Y. Fang, T. Wang, H. Zhu, L. Ji, Q. Sun, D.W. Zhang, L. Chen (陈琳), Ionic diffusive nanomemristors with dendritic competition and cooperation functions for ultralow voltage neuromorphic computing. ACS nano, 2024.

    [11] J. Zhang, K. Xu, L. Lu, C. Lu, X. Tao, Y. Liu, J. Yu, J. Meng, D.W. Zhang, T. Wang, L. Chen (陈琳), Ferroelectric/Antiferroelectric HfZrOx Artificial Synapses/Neurons for Convolutional Neural Network–Spiking Neural Network Neuromorphic Computing. Nano Letters, 2025.

    [12] T. Feng, H. Xu, Y. Yang, X. Hu, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, J. Meng, L. Chen (陈琳), Organic Synaptic Transistors Based on C8-BTBT/PMMA/PbS QDs for UV to NIR Face Recognition Systems. Nano Letters, 2025.

    [13] Y. Liu, T. Wang, Y. Song, K. Xu, R. Yuan, Z. Li, J. Yu, J. Meng, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Innovative Ultralow Thermal Budget ZrHfOx Ferroelectric Films with Low-Temperature Phase Transition for Next-Generation High-Speed Multifunctional Devices. Nano Letters, 2024.

    [14] K. Xu, T. Wang, C. Lu, Y. Song, Y. Liu, J. Yu, Y. Liu, Z. Li, J. Meng, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Novel two-terminal synapse/neuron based on an antiferroelectric hafnium zirconium oxide device for neuromorphic computing. Nano Letters, 2024.

    [15] C. Lu, J. Meng, J. Yu, J. Song, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Novel three-dimensional artificial neural network based on an eight-layer vertical memristor with an ultrahigh rectify ratio (>107) and an ultrahigh nonlinearity (>105) for neuromorphic computing. Nano Letters, 2024.

    [16] C. Lu, J. Meng, J. Song, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Self-rectifying all-optical modulated optoelectronic multistates memristor crossbar array for neuromorphic computing. Nano Letters, 2024.

    [17] Z. Li, J. Wei, J. Meng, Y. Liu, J. Yu, T. Wang, K. Xu, P. Liu, H. Zhu, S. Chen, Q. Sun, D.W. Zhang, L. Chen (陈琳), The doping effect on the intrinsic ferroelectricity in hafnium oxide-based nano-ferroelectric devices. Nano Letters, 2023.

    [18] Q. Li, T. Wang, Y. Fang, X. Hu, C. Tang, X. Wu, H. Zhu, L. Ji, Q. Sun, D.W. Zhang, L. Chen (陈琳), Ultralow power wearable organic ferroelectric device for optoelectronic neuromorphic computing. Nano Letters, 2022.

    [19] J. Meng, T. Wang, H. Zhu, L. Ji, W. Bao, P. Zhou, L. Chen (陈琳), Q. Sun, D.W. Zhang, Integrated in-sensor computing optoelectronic device for environment-adaptable artificial retina perception application. Nano letters, 2021.

    [20]T. Wang, J. Meng, M. Rao, Z. He, L. Chen (陈琳), H. Zhu, Q. Sun, S. Ding, W. Bao, P. Zhou, and D.W. Zhang, “Three-Dimensional Nanoscale Flexible Memristor Networks with Ultralow Power for Information Transmission and Processing Application,” Nano Letters, vol. 20, no. 6, pp. 4111-4120, Jun 10, 2020.

    [21] Q. Li, Y. Liu, Y. Cao, T. Wang, H. Zhu, L. Ji, W. Liu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Ferroelectric artificial synapse for neuromorphic computing and flexible applications. Fundamental Research, 2023.

    [22] B. Cai, C. Wang, K. Chen, Q. Sun, D.W. Zhang, L. Chen (陈琳), A Multifunctional Self-Rectifying Memristor Enabling LIF Neuron and Nociceptor Behaviors. IEEE Electron Device Letters, 2025.

    [23] C. Wang, J. Yu, S. Guo, X. Jin, M. Zhao, H. Li, C. Guo, D. Tian, H. Zhu, J. Meng, Q. Sun, Y. Xie, Hao. Wang, D.W. Zhang, T. Wang, and L. Chen (陈琳), Hybrid Recovery Strategy for the Imprint Effect in HZO-based FeRAM Under Incomplete Polarization State. IEEE Electron Device Letters, 2025.

    [24] B. Cai, C. Wang, K. Chen, Q. Sun, D.W. Zhang, L. Chen (陈琳), A Multifunctional Device Combining Photodetection and Neuromorphic Memory for Efficient Target Recognition. IEEE Electron Device Letters, 2025.

    [25] J. Zhang, J. Yu, Z. Li, K. Xu, Y. Liu, J. Meng, H. Zhu, Q. Sun, X. Zhu, D.W. Zhang, L. Chen (陈琳), Excellent reliability in Hf0.5Zr0.5O2 based ferroelectric device with oxygen-doped ITO electrodes. IEEE Electron Device Letters, 2024.

    [26] B. Qian, X. Li, Y. Liu, S. Wang, J. Meng, T. Wang, Q. Sun, David Wei Zhang, L. Chen (陈琳), BEOL Compatible Ultra-Thin ITO Transistor with Performance Recoverable Capability by in Situ Electrothermal Annealing. IEEE Electron Device Letters, 2024.

    [27] B. Cai, T. Wang, C. Wang, Q. Sun, D.W. Zhang, L. Chen (陈琳), A photomemristor with temporal dynamics for in-sensor reservoir computing. IEEE Electron Device Letters, 2024.

    [28] Y. Song, J. Yu, Z. Wang, K. Xu, Y. Liu, C. Wang, K. Chen, Q. Sun, D.W. Zhang, L. Chen (陈琳), Ultrafast Switching of Ferroelectric HfO2-ZrO2 Under Low Voltage With Layered Structure. IEEE Electron Device Letters, 2024.

    [29] C. Lu, J. Meng, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, L. Chen (陈琳), Fully light modulated self-powered optoelectronic memristor for neuromorphic computing. IEEE Electron Device Letters, 2023.

    [30] K. Xu, T. Wang, Y. Liu, J. Yu, Z. Li, J. Meng, H. Zhu, Q. Sun, X. Zhu, D.W. Zhang, L. Chen (陈琳),  Ferroelectric and Antiferroelectric Phenomenon in Lanthanum Doped Hafnium Based Thin Films. IEEE Electron Device Letters, 2023.

    [31] J. Meng, Y. Liu, Y. Fang, Z. Li, J. Song, T. Wang, H. Zhu, P. Chen, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Fiber-shaped cu-ion diffusive memristor for neuromorphic computing. IEEE Electron Device Letters, 2023.

    [32] X. Hu, J. Meng, Q. Li, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Flexible organic optoelectronic devices for neuromorphic computing. IEEE Electron Device Letters, 2023.

    [33] Z. Li, J. Meng, J. Yu, Y. Liu, T. Wang, K. Xu, H. Zhu, P. Chen, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Stabilizing the ferroelectric phase in HfAlO ferroelectric tunnel junction with different bottom electrodes. IEEE Electron Device Letters, 2023.

    [34] Z. Li, J. Meng, J. Yu, Y. Liu, T. Wang, P. Liu, S. Chen, H. Zhu, P. Chen, Q. Sun, D.W. Zhang, and L. Chen (陈琳), CMOS compatible low power consumption ferroelectric synapse for neuromorphic computing. IEEE Electron Device Letters, 2023.

    [35] J. Song, J. Meng, C. Lu, T. Wang, H. Zhu, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Photoelectric Synaptic Device Based on Bilayerd O R/O P-InGaZnO for Neuromorphic Computing. IEEE Electron Device Letters, 2023.

    [36] J. Meng, Z. Li, Y. Fang, Q. Li, Z. He, T. Wang, H. Zhu, L. Ji, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Li-ion doped artificial synaptic memristor for highly linear neuromorphic computing. IEEE Electron Device Letters, 2022.

    [37] Q. Li, T. Wang, Y. Yang, J. Meng, X. Wu, H. Zhu, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Artificial vision adaptation based on optoelectronic neuromorphic transistors. IEEE Electron Device Letters, 2022.

    [38] Q. Li, T. Wang, X. Hu, X. Wu, H. Zhu, L. Ji, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Organic optoelectronic synaptic devices for energy-efficient neuromorphic computing. IEEE Electron Device Letters, (2022.

    [39] Y. Fang, J. Meng, Q. Li, T. Wang, H. Zhu, L. Ji, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Two-terminal photoelectric dual modulation synaptic devices for face recognition. IEEE Electron Device Letters, 2022.

    [40] J. Yu, T. Wang, Z. Li, Y. Liu, J. Meng, K. Xu, P. Liu, H. Zhu, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Improved Ferroelectricity and Tunneling Electro Resistance in Zr-Rich HfxZr1-xO2 Ferroelectric Tunnel Junction. IEEE Electron Device Letters, 2022.

    [41] Z. Li, T. Wang, Y. Liu, J. Yu, J. Meng, P. Liu, K. Xu, H. Zhu, Q. Sun, D.W. Zhang, and L. Chen (陈琳), Understanding the effect of oxygen content on ferroelectric properties of Al-doped HfO thin films. IEEE Electron Device Letters, 2022.

    [42] C. Wang, H. Liu, L. Chen (陈琳), H. Zhu, L. Ji, Q.-Q. Sun, and D. W. Zhang, “Ultralow-Power Synaptic Transistor Based on Wafer-Scale MoS2 Thin Film for Neuromorphic Application,” IEEE Electron Device Letters, 2021.

    [43] Y. Liu, Y. Cao, H. Zhu, L. Ji, L. Chen (陈琳), Q. Sun, D.W. Zhang, HfZrOₓ-based ferroelectric tunnel junction with crested symmetric band structure engineering. IEEE Electron Device Letters, 2021.

    [44] Y. Wang, Y. Yang, Z. He, H. Zhu, L. Chen (陈琳), Q. Sun, and D. W. Zhang, “Laterally Coupled 2D MoS2 Synaptic Transistor with Ion Gating,” IEEE Electron Device Letters, 2020.

    [45] M. Zhang, H. Li, J. Xu, H. Zhu, L. Chen (陈琳), Q. Sun, and D. W. Zhang, “High-Performance ReS2 FET for Optoelectronics and Flexible Electronics Applications,” IEEE Electron Device Letters, 2019.