• 当前位置:首页  师资概况  教师名录
    • 教师名录

    陈时友
    研究员 、博士生导师
    电         话:
    研  究  所:
    邮         箱:chensy@fudan.edu.cn
    个人网址:
    办公地址:复旦大学邯郸校区微电子学楼
    • 研究方向
    • 教育背景
    • 学术经历
    • 荣誉称号
  • 研究方向:

    半导体材料与器件的计算模拟与设计

    缺陷和掺杂,缺陷的第一性原理计算模拟方法发展

    电子器件的原子级仿真方法和TCAD软件、辐照效应和可靠性物理

    新型多元化合物半导体材料与器件

     

    教育背景

    复旦大学,凝聚态物理,博士


    工作、学术经历

    202103至今 复旦大学微电子学院,研究员

    201907–202102 华东师范大学物理与电子科学学院,研究员

    201307–201906 华东师范大学信息科学技术学院,研究员

    200907–201306 华东师范大学信息科学技术学院,副研究员

    201606–201609 橡树岭国家实验室,访问学者

    201105–201305 劳伦斯-伯克利国家实验室,博士后


    获奖或荣誉:

    中国电子学会自然科学二等奖(2021,第二完成人)

    中国材料研究学会计算材料学青年奖(2017

    教育部自然科学奖一等奖(2015,第二完成人)


    人才称号:

    上海市优秀学术带头人(2019,青年)

    国家自然科学基金优秀青年基金(2017

    上海市教委曙光计划(2016

    上海市青年拔尖人才(2015

    上海市青年科技启明星(2014

     

    代表性成果:

    [1] Menglin Huang, Zhengneng Zheng, Zhenxing Dai, Xinjing Guo, Shanshan Wang, Lilai Jiang, Jinchen Wei, Shiyou Chen*, DASP: Defect and Dopant ab-initio Simulation Package, Journal of Semiconductors, 2022, 4, 042101; doi: 10.1088/1674-4926/43/4/042101; arXiv:2201.02079.

    [2] Shanshan Wang, Menglin Huang, Yu-Ning Wu, Weibin Chu, Jin Zhao, Aron Walsh, Xin-Gao Gong, Su-Huai Wei, Shiyou Chen*, Effective Lifetime of Non-Equilibrium Carriers in Semiconductors from Non-Adiabatic Molecular Dynamics Simulations, 2022, arXiv:2202.08167.

    [3] Shreyash Hadke, Menglin Huang*, Chao Chen*, Ying Fan Tay, Shiyou Chen, Jiang Tang, and Lydia Wong*, Emerging Chalcogenide Thin Films for Solar Energy Harvesting DevicesChemical Reviews, 2022, DOI: 10.1021/acs.chemrev.1c00301.

    Shanshan Wang, Menglin Huang, Yu-Ning Wu*, and Shiyou Chen*, Formation of BiBi Dimers in Heavily Bi-Doped Lead Halide Perovskites: Origin of Carrier Density Saturation, Physical Review Applied, 2022, 17, 024024.

    [4] Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Ya-Bin Sun, Jianlu Wang, Shiyou Chen*, David Wei Zhang, Peng Zhou*, Ultrafast non-volatile flash memory based on van der Waals heterostructures, Nature Nanotechnology, 2022, 16, 874.

    Zenghua Cai, Menglin Huang, Peng Zhou*, Shiyou Chen*, A Generalized Tunneling Current Formula for Metal/Insulator Heterojunctions under Large Bias and Finite Temperature, 2021, arXiv:2103.11400.

    [5] Lele Cai, Shanshan Wang, Menglin Huang, Yu-Ning Wu, Shiyou Chen, First-principles identification of deep energy levels of sulfur impurities in silicon and their carrier capture cross sections, Journal of Physics D-Applied Physics, 2021, 54, 335103.

    [6] Zenghua Cai, Yuning Wu*, Shiyou Chen*, Energy-dependent knock-on damage of organic–inorganic hybrid perovskites under electron beam irradiation: First-principles insights, Appl. Phys. Lett., 2021, 119, 123901.

    [7] Menglin Huang, Zenghua Cai, Shanshan Wang, Xin-Gao Gong, Su-Huai Wei, Shiyou Chen*, More Se Vacancies in Sb2Se3 under Se-Rich Conditions: An Abnormal Behavior Induced by Defect-Correlation in Compensated Compound Semiconductors, Small, 2021, 17, 2102429.

    [8] Jinchen Wei, Lilai Jiang, Menglin Huang, Yuning Wu*, Shiyou Chen*, Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights, Advanced Functional Materials, 2021, 31, 2104913.

    [9] Menglin Huang, Shan-Shan Wang, Yu-Ning Wu*, Shiyou Chen*; Defect physics of ternary semiconductor ZnGeP2 with a high density of anion-cation antisites: A first-principles study, Physical Review Applied, 2021, 15, 024035.

    [10] Menglin Huang, He Li, Shiyou Chen*, Triple-Site Dopant-Defect Complexes in Mg-H-Codoped GaN: First-Principles Identification, physica status solidi a, 2021, 218, 2000723.

    [11] Hai Wei, Yali Yang, Shiyou Chen*, H. J. Xiang*, Lead-free hybrid perovskite N(CH3)4SnI3 with robust ferroelectricity induced by large and non-polar N(CH3)4(+) molecular cation, Nature Communications 2021, 12, 637.

    [12] Mingrui He, Xian Zhang, Jialiang Huang, Jianjun Li*, Chang Yan, Jihun Kim, Yi‐Sheng Chen, Limei Yang, Julie M. Cairney, Yu Zhang, Shiyou Chen*, Jinhyeok Kim*, Martin A. Green, Xiaojing Hao*, High Efficiency Cu2ZnSn(S,Se)4 Solar Cells with Shallow LiZn Acceptor Defects Enabled by Solution‐Based Li Post‐Deposition Treatment. Advanced Energy Materials, 2021, 11, 2003783.

    [13] Yachao Du, Shanshan Wang, Qingwen Tian*, Yuechao Zhao, Xiaohuan Chang, Haiqin Xiao, Yueqing Deng, Shiyou Chen*, Sixin Wu*, Shengzhong Liu*, Defect Engineering in Earth-Abundant Cu2ZnSn(S,Se)4 Photovoltaic Materials via Ga3+-Doping for over 12% Efficient Solar Cells, Advanced Functional Materials, 2021, 31, 2010325.

    [14] Ying Bai, Zeng-Hua Cai, Yu-Ning Wu*, Shiyou Chen*, Enhancing neutron radiation resistance of silicon-based semiconductor devices through isotope separation and enrichment, Radiation Effects and Defects in Solids, 2021, 1855178.

    [15] Jianjun Li*, Yanchan Huang, Jialiang Huang, Guangxing Liang, Yunxiang Zhang, Germain Rey, Fei Guo, Zhenghua Su, Hongbing Zhu, Lele Cai, Kaiwen Sun, Yun Sun, Fangyang Liu*, Shiyou Chen*, Xiaojing Hao*, Yaohua Mai*, Martin A. Green*, Defect Control for 12.5% Efficiency Cu2ZnSnSe4 Kesterite Thin-Film Solar Cells by Engineering of Local Chemical Environment, Advanced Materials 2020, 32, 2005268.

    [16] Dan Han, Tao Zhang, Shiyou Chen*, High-throughput first-principles screening of layered magnetic double perovskites Cs4MSb2X12 for spintronic applications, Journal of Physics-Condensed Matter, 2020, 32, 225705.

    [17] Tao Zhang, Zenghua Cai, Shiyou Chen*, Chemical Trends in the Thermodynamic Stability and Band Gaps of 980 Halide Double Perovskites: A High-Throughput First-Principles Study, ACS Applied Materials & Interfaces, 2020, 12, 20680.

    [18] He Li, Menglin Huang, Shiyou Chen*, First-principles exploration of defect-pairs in GaN, Journal of Semiconductors, 2020, 41, 032104.

    [19] Chen-Min Dai, Tao Zhang, Yu-Ning Wu*, Shiyou Chen*, Halide Double-Perovskite Light-Emitting Centers Embedded in Lattice-Matched and Coherent Crystalline Matrix, Advanced Functional Materials, 2020, 30, 2000653.

    [20] Zenghua Cai, Chen-Min Dai, Shiyou Chen*, Intrinsic Defect Limit to the Electrical Conductivity and a Two-Step p-Type Doping Strategy for Overcoming the Efficiency Bottleneck of Sb2S3-Based Solar Cells, Solar RRL, 2020, 4, 1900503.

    [21] Zenghua Cai, Shiyou Chen*, Extrinsic dopants in quasi-one-dimensional photovoltaic semiconductor Sb2S3: A first-principles study, Journal of Applied Physics, 2020, 127, 183101.

    [22] Jinchen Wei, Chao Wang, Tao Zhang, Chen-Min Dai, Shiyou Chen*, High-throughput screening and classification of layered di-metal chalcogenides, Nanoscale, 2019, 11, 13924.

    [23] Menglin Huang, Peng Xu, Dan Han, Jiang Tang, Shiyou Chen*, Complicated and Unconventional Defect Properties of the Quasi-One-Dimensional Photovoltaic Semiconductor Sb2Se3, ACS Applied Materials & Interfaces, 2019, 11, 15564.

    [24] Zenghua Cai, Shiyou Chen*, Lin-Wang Wang*, Dissociation Path Competition of Radiolysis-Ionization induced Molecule Damage under Electron Beam Illumination, Chemical Science, 2019, 10, 10706.

    [25] Dan Han, Wenmei Ming, Haixuan Xu, Shiyou Chen*, Deyan Sun, Mao-Hua Du*, Chemical Trend of Transition-Metal Doping in WSe2, Physical Review Applied, 2019, 12, 034038.

    [26] Chen-Min Dai, Peng Xu, Menglin Huang, Zeng-Hua Cai, Dan Han, Yuning Wu*, Shiyou Chen*, NaSbSe2 as a promising light-absorber semiconductor in solar cells: First-principles insights, APL Materials, 2019, 7, 081122.

    [27] Jiqiang Li, Zhen-Kun Yuan, Shiyou Chen*, Xin-Gao Gong*, Su-Huai Wei, Effective and Noneffective Recombination Center Defects in Cu2ZnSnS4: Significant Difference in Carrier Capture Cross Sections, Chemistry of Materials, 2019, 31, 826.

    [28] Xian Zhang, Zhen-Kun Yuan, Shiyou Chen*, Low Electron Carrier Concentration Near the p-n Junction Interface: A Fundamental Factor Limiting Short-Circuit Current of Cu(In,Ga)Se2 Solar Cells, Solar RRL, 2019, 3, 1900057.

    [29] Jixuan Wu, Dan Han, Wenjing Yang, Shiyou Chen, Xiangwei Jiang*, Jiezhi Chen *, Comprehensive investigations on charge diffusion physics in SiN-based 3D NAND flash memory through systematical Ab initio calculations, 2017 IEEE International Electron Devices Meeting (IEDM), 2017, 4.5.1-4.

    [30] 陈时友; 黄梦麟; 张涛; 蔡增华; 半导体缺陷第一性原理计算模拟软件, 软件著作权,2019-12-4.