
研究方向:
新型二维层状半导体电子器件与特性研究
下一代CMOS兼容非易失存储器研究
教育背景:
复旦大学,物理学,博士
学术经历:
2013年12月-至今 复旦大学,微电子学院,教授
2008年05月-2013年12月 复旦大学,微电子学院,副研究员
2006年08月-2007年07月 韩国,首尔国立大学,访问学者
2005年07月-2008年04月 复旦大学,微电子学院,助理研究员
2000年07月-2005年06月 复旦大学,信息科学与工程学院
1996年07月-2000年06月 复旦大学,物理学系
荣誉称号:
全功能二维半导体/硅基混合架构异质集成闪存芯片,中国科学十大进展,2025
尚思学者,2025
相辉学者,2025
科学探索奖,2024
上海市自然科学一等奖,第一完成人,2024
国家级教学成果二等奖, 第一完成人,2022
教育部自然科学二等奖,第一完成人,2022
上海市教学成果一等奖, 第一完成人,2022
上海市自然科学二等奖,第一完成人,2020
上海市青年科技杰出贡献奖,2020
国家杰出青年科学基金获得者,2019/2025青A延续
上海市曙光学者,2018
科技部中青年领军人才,2018
国家自然基金委优秀青年基金获得者,2016
上海市科技启明星,2013
代表性论文:
[1] Liyuan Zhu, Yang Yang, Xiangqi Dong, Xiaojian Wu, Shunli Ma*, Peng Zhou (周鹏)*,Radiation-tolerant atomic-layer-scale RF system for spaceborne communication,(Nature, 650, 346–352, 2026). (通讯作者)
[2] Zhenzhen Shen, Haoqi Wu, Chunsen Liu*, Zizheng Liu, Yongbo Jiang, Tanjun Wang, Peng Zhou (周鹏)*, Wafer-scale monolayer dielectric integration on atomically thin semiconductors,(Nature Materials, 25, 199–206, 2026). (通讯作者)
[3] Saifei Gou, Yuxuan Zhu, Shiyou Chen*, Peng Zhou (周鹏)*, Wenzhong Bao*, Quasi-non-volatile capacitorless DRAM based on ultralow-leakage edge-contact MoS2 transistors,(Nature Materials, 2026). (通讯作者)
[4] Peng Zhou,Electronic Devices and System Integration in the Post-Moore Era,(IEEE International Electron Devices Meeting (IEDM) 2025 邀请报告).
[5] Chunsen Liu*, Yongbo Jiang, Boqian Shen, Shengchao Yuan, Zhenyuan Cao, Zhongyu Bi, Chong Wang, Yutong Xiang, Yang Wang, Shuiyuan Wang, Peng Zhou (周鹏)*,A full-featured 2D flash chip enabled by system integration,(Nature, 646, 1081–1088, 2025). (通讯作者)
[6] Tianxiang Wu, Liyuan Zhu, Xiangqi Dong, Wenzhong Bao*, Shunli Ma*, Peng Zhou (周鹏)*, Integrated two-dimensional microwave transmitters fabricated on the wafer scale,(Nature Electronics, 8, 913–920, 2025). (通讯作者)
[7] Yin Wang, Saifei Gou, Xiangqi Dong, Zihan Xu, Yufeng Xie, Shunli Ma, Peng Zhou (周鹏)*, Yang Chai*, Wenzhong Bao*, A biologically inspired artificial neuron with intrinsic plasticity based on monolayer molybdenum disulfide,(Nature Electronics, 8,680–688, 2025). (通讯作者)
[8] Shuiyuan Wang*, Chengyong Jiang, Yiye Yu, Zhenhan Zhang, Ruge Quhe, Weida Hu*, Jiayi Zhang*, Peng Zhou (周鹏)*,Tellurium nanowire retinal nanoprosthesis improves vision in models of blindness,(Science, 388, eadu2987, 2025). (通讯作者)
[9] Sifan Chen, Shuiyuan Wang*, Zizheng Liu, Tanjun Wang, Yuyan Zhu, Haoqi Wu, Chunsen Liu, Peng Zhou (周鹏)*,Channel and contact length scaling of two-dimensional transistors using composite metal electrodes,(Nature Electronics, 8, 394–402, 2025). (通讯作者)
[10] Yutong Xiang, Chong Wang, Chunsen Liu*, Tanjun Wang, Yongbo Jiang, Yang Wang, Shuiyuan Wang, Peng Zhou (周鹏)*,Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection,(Nature, 641, 90–97, 2025). (通讯作者)
[11] Mingrui Ao, Xiucheng Zhou, Shuiyuan Wang, Jing Wan, Jun Han, Wenzhong Bao*, Peng Zhou (周鹏)*,A RISC-V 32-bit microprocessor based on two-dimensional semiconductors,(Nature, 640, 654–661, 2025). (通讯作者)
[12] Liwei Liu*, Zhenggang Cai, Siwei Xue, Hai Huang, Sifan Chen, Yusheng Yao, Wenzhong Bao*, Peng Zhou (周鹏)*,A mass transfer technology for high-density two-dimensional device integration,(Nature Electronics, 8, 135–146,2025). (通讯作者)
[13] Yongbo Jiang, Chunsen Liu*, Zhenyuan Cao, Chuhang Li, Zizheng Liu, Chong Wang, Yutong Xiang, Peng Zhou (周鹏)*,A scalable integration process for ultrafast two-dimensional flash memory,(Nature Electronics, 7, 868–875, 2024). (通讯作者)
[14] Senfeng Zeng, Chunsen Liu*, Peng Zhou (周鹏)*,Transistor engineering based on 2D materials in the post-silicon era,(Nature Reviews Electrical Engineering, 1, 335–348, 2024). (通讯作者)
[15] Ruge Quhe*, Ziye Di, Jiaxin Zhang, Yuxuan Sun, Lingxue Zhang, Ying Guo, Shuiyuan Wang *, and Peng Zhou (周鹏)*, Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics, (Nature Nanotechnology, 19, 173–180, 2024). (通讯作者)
[16] Yin Xia, Xinyu Chen, Jinchen Wei, Shuiyuan Wang, Shiyou Chen, Simin Wu, Minbiao Ji, Zhengzong Sun, Zihan Xu*, Wenzhong Bao*, and Peng Zhou (周鹏)*, 12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture, (Nature Materials, 22, 1324-1331, 2023).(通讯作者)
[17] Xiaohe Huang, Chunsen Liu*, Zhaowu Tang, Senfeng Zeng, Shuiyuan Wang, and Peng Zhou (周鹏)*, An ultrafast bipolar flash memory for self-activated in-memory computing, (Nature Nanotechnology, 18, 486-492, 2023) .(通讯作者)
[18] Ling Tong, Jing Wan*, Kai Xiao, Jian Liu, Wenzhong Bao* , and Peng Zhou (周鹏)*, Heterogeneous complementary field-effect transistors based on silicon and molybdenum disulfide, (Nature Electronics, 6, 37–44, 2023). (通讯作者)
[19] Shuiyuan Wang, Xiaoxian Liu, Mingsheng Xu, Liwei Liu, Deren Yang, and Peng Zhou (周鹏)*, Two-dimensional devices and integration towards the silicon lines, (Nature Materials, 21, 1225–1239, 2022). (通讯作者)
[20] Zhenhan Zhang, Shuiyuan Wang, Chunsen Liu, Runzhang Xie, Weida Hu* , and Peng Zhou (周鹏)*,All-in-one two-dimensional retinomorphic hardware device for motion detection and recognition, (Nature Nanotechnology, 17, 27–32, 2022). (通讯作者)
[21] Lan Liu, Chunsen Liu, Lilai Jiang, Jiayi Li, Yi Ding, Shuiyuan Wang, Yu-Gang Jiang, Ya-Bin Sun, Jianlu Wang, Shiyou Chen *, David Wei Zhang, and Peng Zhou(周鹏)*,Ultrafast non-volatile flash memory based on van der Waals heterostructures, (Nature Nanotechnology, 16, 874–881, 2021). (通讯作者)
[22] Yunfeng Chen, Yang Wang, Zhen Wang, Fang Wang, Peng Wang, Jinshui Miao, Jianlu Wang, Xiaoshuang Chen, Wei Lu, Peng Zhou(周鹏)*, Weida Hu*,Unipolar barrier photodetectors based on van der Waals heterostructures, (Nature Electronics, 4, 357–363,2021). (通讯作者)
[23] Huawei Chen, Xiaoyong Xue, Chunsen Liu, Weida Hu *, and Peng Zhou(周鹏)*, Logic gates based on neuristors made from two-dimensional materials, (Nature Electronics, 1-6, 2021) (通讯作者)
[24] Xiaohe Huang, Chunsen Liu, Zhaowu Tang, Senfeng Zeng, Yu-Gang Jiang, David Wei Zhang, and Peng Zhou(周鹏)*, High drive and low leakage current MBC FET with channel thickness 1.2nm/0.6nm, (IEEE International Electron Devices Meeting (IEDM), IEEE, 12.1. 1-12.1. 4, 2020). (通讯作者)
[25] Chunsen Liu, Huawei Chen, Shuiyuan Wang, Qi Liu, Yu-Gang Jiang, David Wei Zhang, Ming Liu, and Peng Zhou(周鹏)*, Two-dimensional materials for next-generation computing technologies, (Nature Nanotechnology, 15, 545-557, 2020). (通讯作者)
[26] Guangjian Wu, Bobo Tian , Peng Zhou(周鹏)*, Qi Liu , Chungang Duan, Shantao Zhang, Xiangjian Meng, Shiwei Wu , Weida Hu , Xinran Wang, Junhao Chu and Jianlu Wang, Programmable transition metal dichalcogenide homojunctions controlled by nonvolatile ferroelectric domains, (Nature Electronics, 3, 43-50, 2020). (通讯作者)
[27] Chunsen Liu, Huawei Chen, Xiang Hou, Heng Zhang, Jun Han, Yu-Gang Jiang, Xiaoyang Zeng, David Wei Zhang, and Peng Zhou(周鹏)*, Small footprint transistor architecture for photoswitching logic and in situ memory, (Nature Nanotechnology, 14, 662-667, 2019). (通讯作者)
[28] Chunsen Liu, Xiao Yan, Xiongfei Song, Shijin Ding, David Wei Zhang and Peng Zhou(周鹏)*, A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications, (Nature Nanotechnology, 13, 404-410, 2018). (通讯作者)
[29] Enze Zhang, Weiyi Wang, Cheng Zhang, Yibo Jin, Guodong Zhu, Qingqing Sun, David Wei Zhang, Peng Zhou(周鹏)*, and Faxian Xiu*, Tunable charge-trap memory based on few-layer MoS2, (ACS Nano, 9, 612-619, 2015). (通讯作者)
[30] X. Wu, P. Zhou(周鹏)*, J. Li *, L.Y. Chen, H. B. Lv, Y. Y. Lin, and T. A. Tang, Reproducible unipolar resistance switching in stoichiometric ZrO2 films, (Applied Physics Letters ,90, 183507, 2007). (通讯作者)